Display device

Display device

  • CN 1,399,165 A
  • Filed: 07/20/2002
  • Published: 02/26/2003
  • Est. Priority Date: 11/17/1995
  • Status: Active Application
First Claim
Patent Images

1. semiconductor devices comprises:

  • A substrate;

    An on-off element comprises at least one and is formed on thin film transistor (TFT) on the described Semiconductor substrate, and described thin film transistor (TFT) comprises;

    Be formed on the semiconductor island district that is made of crystalline silicon on the described substrate, described semiconductor island district has at least one pair of doped region and the channel region between described a pair of doped region;

    Be formed on the gate insulating film in the described semiconductor island district;

    Be formed on the gate electrode on the described channel region, described gate insulating film is between described gate electrode and described channel region;

    Be formed on first dielectric film that constitutes by silicon nitride on the described on-off element;

    Be formed on the organic resin film on described first dielectric film;

    WithBe formed on the pixel electrode on the described organic resin film, be electrically connected to one of described doped region.

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