Method to provide reduced constant E-field during erase of EEPROM for reliability improvement

Method to provide reduced constant E-field during erase of EEPROM for reliability improvement

  • CN 1,411,602 A
  • Filed: 12/05/2000
  • Published: 04/16/2003
  • Est. Priority Date: 12/17/1999
  • Status: Abandoned Application
First Claim
Patent Images

1. method that is used for wiping the storage unit of the memory device that a plurality of storage unit form, each storage unit has source electrode and control grid, wherein electric field E FieldBe by equation E Field

  • a g(V Gate-V Th+ V Tuv)+(a s-1) V SourceDetermine that the method comprises;

    , A) on the storage unit of desiring to wipe, carry out ultraviolet erasing to produce ultraviolet erasing threshold voltage, V TuvAnd therefore B) apply voltage V SourceSource electrode to the storage unit of desiring to wipe;

    And C) apply variation voltage V GateTo the control grid of desiring eraseable memory unit, wherein, in erase process, V Gate-V ThFix;

    Wherein, in erase process, this method is used for reducing peak value electric field.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×