Semiconductor laser capable of controlling leakage current in light emitting end face and producing method

Semiconductor laser capable of controlling leakage current in light emitting end face and producing method

  • CN 1,426,140 A
  • Filed: 11/12/2002
  • Published: 06/25/2003
  • Est. Priority Date: 11/12/2001
  • Status: Active Application
First Claim
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1. semiconductor laser device, this device comprises:

  • The electrode metal film that on the plane of crystal of Semiconductor substrate, forms;

    And the silicon thin film that on light emitting end face, forms;

    The interval of predetermined distance wherein is provided between electrode metal film and light emitting end face.

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