Method for mfg. semiconductor elements

Method for mfg. semiconductor elements

  • CN 1,427,454 A
  • Filed: 11/28/2002
  • Published: 07/02/2003
  • Est. Priority Date: 12/18/2001
  • Status: Active Application
First Claim
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1. the manufacture method of a semiconductor element is characterized in that:

  • be included in the non-oxidizing atmosphere in the 1st operation of deposit film on the substrate and form the 2nd operation of metal oxide film by the oxidation that makes described metal film in oxidizing atmosphere.

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