Semiconductor device with lateral metal insulator semiconductor transistor and its manufacturing method

Semiconductor device with lateral metal insulator semiconductor transistor and its manufacturing method

  • CN 1,430,289 A
  • Filed: 12/27/2002
  • Published: 07/16/2003
  • Est. Priority Date: 12/27/2001
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • The semiconductor layer of one first conduction type;

    AndA diffusion region that is formed in the semiconductor layer, this diffusion region comprises first impurity diffusion zone of first conduction type and second impurity diffusion zone of second conduction type, this diffusion region has respectively by first district of first conduction type that impurity concentration determined of first and second impurity diffusion zones and second district of second conduction type, knot between first district and second district is formed in the part that wherein first and second impurity diffusion zones overlap each other, and the impurity concentration in the zone of from a group that comprises first and second districts, selecting along cycle of the in-plane of semiconductor layer less than the Breadth Maximum of first and second impurity diffusion zones that constitute this selection area along the in-plane of semiconductor layer.

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