Device and method of manufacturing integrated circuit

Device and method of manufacturing integrated circuit

  • CN 1,442,901 B
  • Filed: 10/25/2002
  • Issued: 05/09/2012
  • Est. Priority Date: 10/26/2001
  • Status: Active Grant
First Claim
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1. integrated circuit;

  • Comprise a screen unit;

    Wherein said screen unit comprises that is arranged in the top insulating barrier that the semiconductor region of low conductivity is arranged;

    The silicon area electricity that said screen unit mixes the silicon area and second of first doping is isolated, and the silicon etching that in the silicon area that said first mixes, passes through to expose is handled and confirmed a drill flute in advanceWherein said insulating barrier comprises gate oxide.

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