Semiconductor device having ohmic contact and method for making the same

Semiconductor device having ohmic contact and method for making the same

  • CN 1,467,862 A
  • Filed: 07/10/2002
  • Published: 01/14/2004
  • Est. Priority Date: 07/10/2002
  • Status: Active Application
First Claim
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1. the semiconductor device with an ohmic contact is characterized in that, comprises at least:

  • One ground;

    One p type gallium nitride layer (GaN) is on this ground;

    One p type indium gallium nitride (In xGa 1-xN) layer, on this p type gallium nitride layer, 0<

    x<

    1 wherein;

    And One metal level is on this p type indium gallium nitride layer.

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