Epitaxial substrate for compound semiconductor lumination device and mfg method and luminous device

Epitaxial substrate for compound semiconductor lumination device and mfg method and luminous device

  • CN 1,484,324 A
  • Filed: 07/08/2003
  • Published: 03/24/2004
  • Est. Priority Date: 07/08/2002
  • Status: Active Application
First Claim
Patent Images

1. epitaxial substrate that is used for compound semiconductor light emitting device comprises:

  • The heterogeneous luminous layer structure of a pair of that comprises pn knot;

    WithA p-type layer side layer structure that contacts and form with luminous layer structure is from using In initial comprising successively with the contacted rete of luminous layer structure xAl yGa zOne n-type ground floor of N (x+y+z=1,0≤

    x≤

    1,0≤

    y≤

    1,0≤

    z≤

    1) expression is used In uAl vGa wThe one p-type second layer of N (u+v+w=1,0≤

    u≤

    1,0≤

    v≤

    1,0≤

    w≤

    1) expression and use In pAl qGa rThe 3rd layer on one p-type of N (p+q+t=1,0≤

    p≤

    1,0≤

    q≤

    1,0≤

    r≤

    1) expression, trilamellar membrane contacts formation with its adjacent bed separately.

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