Gallium nitride-based III-V group compound semiconductor

Gallium nitride-based III-V group compound semiconductor

  • CN 1,484,326 A
  • Filed: 04/28/1994
  • Published: 03/24/2004
  • Est. Priority Date: 04/28/1993
  • Status: Abandoned Application
First Claim
Patent Images

1. gallium nitride-based III-V group compound semiconductor device is characterized in that comprising:

  • Substrate with first and second first type surfaces;

    Be formed on first first type surface of described substrate, comprise the semiconductor laminated structure of n type gallium nitride-based III-V group compound semiconductor layer and p type gallium nitride-based III-V group compound semiconductor layer;

    Removing first electrode that forms on the n type layer that exposes behind the p type layer that is arranged on the described n type semiconductor layer;

    AndBe formed on second electrode on the described p type semiconductor layer;

    Wherein, described second electrode has the metal material of at least two kinds of materials selecting from be made of chromium, nickel, gold, titanium, platinum one group.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×