SOI wafer and its manufacturing method

SOI wafer and its manufacturing method

  • CN 1,502,135 A
  • Filed: 03/29/2002
  • Published: 06/02/2004
  • Est. Priority Date: 04/06/2001
  • Status: Active Application
First Claim
Patent Images

1. a SOI wafer is to utilize ion to inject the SOI wafer of peeling off the method made, and it is characterized by:

  • the SOI island peak width of the platform part that the substrate surface that is produced in SOI Waffer edge portion exposes is less than 1mm.

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