Drive circuit and method for mosfet

Drive circuit and method for mosfet

  • CN 1,522,495 A
  • Filed: 02/23/2001
  • Published: 08/18/2004
  • Est. Priority Date: 02/23/2000
  • Status: Abandoned Application
First Claim
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1. circuits for triggering that are used for insulated gate semiconductor device, described insulated gate semiconductor device comprises the grid as the first terminal, and further comprises at least the second and the 3rd terminal, it is characterized in that described circuit comprises:

  • -in circuit, be connected to the charge storage device and the high-speed switching arrangement of the grid of device;

    -high-speed switching arrangement can than the specified turn-on delay time of insulated gate device in the short cycle very first time by and conducting state between switch;

    And-may command high-speed switching arrangement, make it the electric charge between mobile storage device and the insulated gate device grid, so that insulated gate device switched between cut-off state and conducting state in second time cycle shorter than regulation rise time of insulated gate device or fall time.

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