Unique process chemistry for etching organic low-K materials

Unique process chemistry for etching organic low-K materials

  • CN 1,524,287 B
  • Filed: 01/29/2002
  • Issued: 09/01/2010
  • Est. Priority Date: 02/12/2001
  • Status: Active Grant
First Claim
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1. method that is used for the feature of etching integrated circuit (IC) wafer, this wafer are combined with at least one following low K dielectrics layer that part is arranged on hard mask, and this method comprises:

  • This wafer is set in a reative cell;

    To contain CH 3The air-flow of the etchant gasses of F and active etchant is incorporated in this reative cell;

    In this reative cell, form plasma by this etchant gasses;

    With the feature at least a portion of this this low K dielectrics layer of etchant gasses etching;

    With some hard masks of this etchant gasses sputter;

    AndHard mask by fluorine and sputter forms a volatile compound, reduces little sheltering thus.

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