Photoresist composition

Photoresist composition

  • CN 1,527,136 A
  • Filed: 03/05/2003
  • Published: 09/08/2004
  • Est. Priority Date: 03/05/2003
  • Status: Active Application
First Claim
Patent Images

1. microelectronic component substrate, it comprisesSilicon oxynitride layer,Cover the photo-corrosion-resisting agent composition coating of silicon oxynitride layer,Wherein this photo-corrosion-resisting agent composition comprises light acid labile polymer, sensitization acid forming agent compound and tackify component.

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