Process for fabricating Semiconductor device

Process for fabricating Semiconductor device

  • CN 1,542,929 B
  • Filed: 03/12/1994
  • Issued: 05/30/2012
  • Est. Priority Date: 03/12/1993
  • Status: Active Grant
First Claim
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1. a method of making semiconductor device is characterized in that it comprises the following steps:

  • Form amorphous semiconductor film having on the substrate of insulating surface;

    Make said amorphous semiconductor membrane crystallization so that form the crystalline semiconductor film;

    On said crystalline semiconductor film through utilizing tetraethoxysilane, oxygen and trichloroethylene to form silicon oxide film as gate insulating film;

    Form the gate electrode of contiguous said crystalline semiconductor film, wherein said gate insulating film is inserted between said crystalline semiconductor film and the said gate electrode, and said gate electrode comprises a kind of material of from the group of being made up of tantalum, titanium, tungsten, molybdenum and silicon, choosing;

    After forming said gate electrode, in said crystalline semiconductor film, introduce impurity element through said gate insulating film, thereby in said crystalline semiconductor film, form at least one impurity range;

    With concentration 1 * 10 17Cm -3To 1 * 10 20Cm -3Between catalysis material introduce impurity range;

    And Annealing is so that the activator impurity element.

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