Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control

Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control

  • CN 1,543,518 A
  • Filed: 07/03/2002
  • Published: 11/03/2004
  • Est. Priority Date: 07/05/2001
  • Status: Active Application
First Claim
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1. method by semi-insulating GaAs (GaAs) material of growing as the controlled admixture of the carbonaceous gas of hotchpotch said method comprising the steps of:

  • Setting has the crucible in seed district;

    Place seed crystal in the seed district of described crucible;

    With the GaAs raw material described crucible of packing into;

    With boron oxide (B 2O 3) material puts into described crucible;

    Setting has the ampoule of upper area and lower region;

    Described seed crystal, GaAs raw material and B will be housed 2O 3The described crucible of material places described ampoule;

    A kind of solid carbon material is placed the lower region of described crucible described ampoule in addition;

    The described ampoule of described solid carbon material and described crucible is equipped with in sealing under vacuum;

    Heat the described ampoule that is closed and make described GaAs raw material melt with controllable mode, the interaction of heat and described solid carbon material produces a kind of carbonaceous gas, and this gas is by described B 2O 3The melt of material and described GaAs interacts;

    And Cool off the described ampoule that is closed with controllable mode.

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