Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

  • CN 1,554,974 A
  • Filed: 11/28/2001
  • Published: 12/15/2004
  • Est. Priority Date: 11/28/2000
  • Status: Active Grant
First Claim
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1. the manufacture method of a LCD comprises:

  • On insulating surface, form semiconductor layer;

    On above-mentioned semiconductor layer, form first dielectric film;

    On above-mentioned first dielectric film, form gate electrode;

    Use first impurity element that above-mentioned gate electrode will provide the n type as mask with first doped in concentrations profiled in above-mentioned semiconductor layer, to form a n type extrinsic region;

    The above-mentioned gate electrode of etching is to form a taper gate electrode portion;

    With second impurity element that the n type is provided with less than second doped in concentrations profiled of described first concentration in semiconductor layer with a n type extrinsic region, pass above-mentioned taper gate electrode portion simultaneously and between a n type extrinsic region and channel formation region territory, form the 2nd n type extrinsic region with this;

    Form second dielectric film to cover above-mentioned gate electrode;

    AndOn above-mentioned second dielectric film, form a lead.

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