Memory unit and semiconductor device

Memory unit and semiconductor device

  • CN 1,574,079 A
  • Filed: 05/26/2004
  • Published: 02/02/2005
  • Est. Priority Date: 05/26/2003
  • Status: Active Grant
First Claim
Patent Images

1. memory storage comprises:

  • Cell array wherein disposes a plurality of storage unit;

    Driving circuit;

    A plurality of selection circuit;

    AndPower circuit,Wherein;

    In a plurality of selection circuit each all comprises memory circuit;

    A plurality of current potentials are supplied to a plurality of selection circuit each from power circuit;

    According to be stored in a plurality of selection circuit each in storer in data among a plurality of current potentials, select a current potential;

    AndUtilization among the signal of driving circuit output is supplied with this current potential a plurality of storage unit corresponding to each the storage unit a plurality of selection circuit.

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