Memory unit and semiconductor device

Memory unit and semiconductor device

  • CN 1,574,079 B
  • Filed: 05/26/2004
  • Issued: 05/30/2012
  • Est. Priority Date: 05/26/2003
  • Status: Active Grant
First Claim
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1. memory storage comprises:

  • Cell array wherein disposes a plurality of storage unit;

    Driving circuit;

    A plurality of selection circuit;

    AndPower circuit,Wherein;

    Each selects circuit to comprise memory circuit in said a plurality of selection circuit;

    From said power circuit a plurality of current potentials are offered each selection circuit said a plurality of selection circuit;

    Selection data according in the memory circuit that is stored in each selection circuit in said a plurality of selection circuit are selected a current potential in said a plurality of current potentials;

    Utilization offers said a plurality of storage unit selected current potential with each selects the corresponding storage unit of circuit in said a plurality of selection circuit from the signal of said driving circuit output;

    The storage unit of shared certain bar word line in said a plurality of storage unit carried out comprise the operation that data write, keep and read, and judge whether problematic judgment standard of said operation according to the institute'"'"'s operating conditions that requires setting;

    If said operation is judged as the non-problem that has, then re-write said selection data, make the absolute value of selected current potential reduce;

    If said operation has been judged as problem, then re-write said selection data, make the absolute value of selected current potential increase, and the absolute value of selected current potential is arranged in the scope than the narrow range that is reduced and increase;

    AndCarry out repeatedly and judge said operation;

    Until said operation be judged as non-problem is arranged till;

    , said operation further increases the absolute value of selected current potential when being judged as problem;

    It is optimum current potential that said operation is judged as non-selected potential setting when problem is arranged, and said optimum current potential is offered corresponding storage unit.

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