Polishing composition

Polishing composition

  • CN 1,576,339 B
  • Filed: 07/02/2004
  • Issued: 03/28/2012
  • Est. Priority Date: 07/03/2003
  • Status: Active Grant
First Claim
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1. a polishing composition is characterized in that, comprises:

  • Be not less than 0.1% weight and be not higher than 10% weight silicon-dioxide,Be not less than 0.05% weight and be not higher than the reductive agent of 1% weight, said reductive agent contain be selected from phosphonic acids, phosphonous acid, ammonium hypophosphate, Resorcinol, pyrogaelol, formic acid, sodium formate, ammonium formate and the gallic acid at least a,Be not less than 0.5% weight and be not higher than 10% weight hydrogen peroxide,Be not less than 0.1% weight and be not higher than 20% weight and contain phosphatic polishing promotor, said phosphoric acid salt be selected from triammonium phosphate, Secondary ammonium phosphate, primary ammonium phosphate, tsp, Sodium phosphate, dibasic, SODIUM PHOSPHATE, MONOBASIC, Tripotassium phosphate, potassium hydrogenphosphate and potassium primary phosphate,And water.

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