Multicrystaline silicon layer structure and its forming method and plane display

Multicrystaline silicon layer structure and its forming method and plane display

CN
  • CN 1,588,215 A
  • Filed: 07/20/2004
  • Published: 03/02/2005
  • Est. Priority Date: 07/20/2004
  • Status: Active Application
First Claim
Patent Images

1. polysilicon layer structure comprises:

  • One first polysilicon layer and one second polysilicon layer, wherein the thickness of this first polysilicon layer is less than the thickness of this second polysilicon layer, and the crystallite dimension of this first polysilicon layer is greater than the crystallite dimension of this second polysilicon layer.

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