Semiconductor device and its manufacture

Semiconductor device and its manufacture

  • CN 1,614,756 A
  • Filed: 12/15/1995
  • Published: 05/11/2005
  • Est. Priority Date: 12/16/1994
  • Status: Abandoned Application
First Claim
Patent Images

1. method of making semiconductor device may further comprise the steps:

  • On a substrate, form a semiconductor film;

    With the described semiconductor film of the linear laser alignment once irradiating of first pulse, move described substrate in direction longitudinally simultaneously perpendicular to the described first pulse linear laser;

    With the described semiconductor film of the linear laser alignment after-sun of second pulse, move described substrate in direction longitudinally simultaneously perpendicular to the described second pulse linear laser;

    Utilize described semiconductor film to form a plurality of thin-film transistors that contain active area, the described active area of each thin-film transistor comprises source region, drain region and the channel region between source region and drain region;

    The step of the wherein said irradiation first time and irradiation is for the second time partly undertaken by the mode that the irradiation area of next laser pulse covers with the irradiation area of each laser pulse;

    WithWherein each above-mentioned active area so that the straight line parallel that described source region and drain region are linked to be form in the mode longitudinally of the described first and second pulse linear lasers.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×