Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same

Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same

  • CN 1,619,820 A
  • Filed: 06/30/2004
  • Published: 05/25/2005
  • Est. Priority Date: 11/22/2003
  • Status: Active Application
First Claim
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1. the dielectric layer of a semiconductor device comprises by adopting technique for atomic layer deposition to form hafnium oxide and the synthetic dielectric layer of aluminium oxide.

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