Immersion lithographic system and method of manufacturing semiconductor device

Immersion lithographic system and method of manufacturing semiconductor device

  • CN 1,624,588 A
  • Filed: 08/11/2004
  • Published: 06/08/2005
  • Est. Priority Date: 08/11/2003
  • Status: Active Grant
First Claim
Patent Images

1. immersion lithographic system is characterized in that this immersion lithographic system comprises:

  • A wavelength is less than or equal to the image light source of 193 nanometers;

    Optics, this optics with an optical surface be disposed at described image light source below, make the rayed sent from the image light source and pass through this optics;

    A semiconductor element substrate, wherein the upper surface of this semiconductor element substrate has one deck photosensitive material layer, and the thickness of this photosensitive material layer is not more than 5000 , and the illumination of passing through described optics is mapped on this semiconductor element substrate;

    AndOne deck immersion fluid is disposed between described photosensitive material layer and the optical surface, and wherein this immersion fluid contacts with the upper surface of photosensitive material layer and the lower surface of optical surface respectively.

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