Transflective type liquid crystal display device and method for fabricating the same

Transflective type liquid crystal display device and method for fabricating the same

  • CN 1,637,551 B
  • Filed: 11/25/2004
  • Issued: 07/11/2012
  • Est. Priority Date: 12/29/2003
  • Status: Active Grant
First Claim
Patent Images

1. transflective LCD device, it comprises:

  • Substrate, thus it has grid line and the data line that limits pixel region intersected with each other;

    Be arranged in the reflecting part and the transmissive part of said each pixel region;

    Be positioned at the whole lip-deep cushion of said substrate, on this cushion, form said data line;

    The data insulation course that on the cushion that comprises data line and data electrode, forms;

    Be arranged in the reflecting electrode of the reflecting part of said pixel region;

    Be arranged in the said reflecting part of the said pixel region that comprises said reflecting electrode and the pixel electrode of transmissive part;

    The thin film transistor (TFT) that comprises the semiconductor layer with source area and drain region, said thin film transistor (TFT) are positioned at the place, point of crossing of said grid line and data line, apply the signal of data line to said pixel electrode in order to the signal according to grid line;

    The gate insulation layer that on the whole surface of data insulation course of the semiconductor layer that comprises thin film transistor (TFT), forms;

    Be positioned at the public electrode wire on the reflecting part of said pixel region, it is parallel with said grid line, and wherein said public electrode wire and said semiconductor layer are overlapped and be formed on the said gate insulation layer;

    Expose the source electrode contact hole of the part source area of said semiconductor layer;

    Expose the drain contact hole of the part drain region of said semiconductor layer;

    Expose the data contact hole of the said data electrode of part of said data line;

    The electrode that will be electrically connected with data electrode by the source area of the thin film transistor (TFT) of source electrode contact holes exposing by the data line of data contact holes exposing, wherein this electrode is by forming with reflecting electrode or pixel electrode identical materials,Wherein said pixel electrode is formed in the said drain contact hole so that said pixel electrode is electrically connected with the drain region of said semiconductor layer, and said pixel electrode is arranged on the said reflecting electrode.

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