Method for forming landing plug contacts in semiconductoe device

Method for forming landing plug contacts in semiconductoe device

  • CN 1,638,045 A
  • Filed: 06/11/2004
  • Published: 07/13/2005
  • Est. Priority Date: 12/29/2003
  • Status: Active Application
First Claim
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1. , forms the method for landing plug contact LPC in a kind of semiconductor device, comprise the steps:

  • Form a plurality of grid structures on substrate, each grid structure comprises a hard mask of grid;

    On grid structure, form an interlayer insulating film;

    By the described interlayer insulating film of chemico-mechanical polishing CMP technology planarization, up to exposing the hard mask of grid;

    On the interlayer insulating film of planarization, form a hard mask material;

    The described hard mask material of patterning, thus a hard mask formed;

    Form a plurality of contact holes, as etching mask the interlayer insulating film of planarization is carried out etching by using hard mask, described contact holes exposing goes out the substrate between the described grid structure;

    On described contact hole, form polysilicon layer;

    By described polysilicon layer is implemented flatening process, form the landing plug contact of imbedding contact hole, up to exposing the hard mask of grid.

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