Polishing pad

Polishing pad

  • CN 1,638,056 A
  • Filed: 10/08/2004
  • Published: 07/13/2005
  • Est. Priority Date: 10/09/2003
  • Status: Active Application
First Claim
Patent Images

1. it is that modulus E '"'"' is the polymeric material of 100-400MPa under 385-750l/Pa and 40 ℃

  • and the 1rad/sec at least 0.1 volume %, in the KEL energy loss factor under 40 ℃ and

    the 1rad/sec that polishing pad that is used for smooth semiconductor substrate, this polishing pad comprise porosity.

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