Mask repair with electron beam-induced chemical etching

Mask repair with electron beam-induced chemical etching

  • CN 1,639,638 B
  • Filed: 06/21/2002
  • Issued: 05/05/2010
  • Est. Priority Date: 06/29/2001
  • Status: Active Grant
First Claim
Patent Images

1. device that is used to repair mask comprises:

  • Support is used to lay described mask;

    Worktable is arranged in described support below, is used at the described support in location, chamber;

    Extract system, described chamber is used to find time;

    Imaging system, the top that is arranged in the opaque defect on the described mask is used to locate described opaque defect;

    Air delivery system is used for the angle that tilts to described opaque defect dispensing reacting gas;

    AndBe arranged in the electron scanning transfer system of described opaque defect top, be used to scan the electron beam of tail diameter with 5-125nm, so that the electronics in the 0.3-3.0keV scope is led to induce the reaction of described reacting gas and described opaque defect and then to form volatile byproducts, wherein said air delivery system and described electron scanning transfer system are arranged on the opposite side of described imaging system.

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