Active area bonding compatible high current structures

Active area bonding compatible high current structures

  • CN 1,645,606 A
  • Filed: 08/20/2004
  • Published: 07/27/2005
  • Est. Priority Date: 08/21/2003
  • Status: Active Application
First Claim
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1. , a kind of integrated circuit comprises:

  • Substrate;

    Top conductive layer, top conductive layer have the subgrade of at least one bonding welding pad and relative stiff materials;

    One or more intermediate conductive layers that are formed between top conductive layer and the substrate;

    The insulation material layer that conductive layer is separated from one another, the one deck in the insulation material layer is hard relatively and at top conductive layer and approach most between the intermediate conductive layer of top conductive layer;

    WithBe formed on the device in the integrated circuit, the intermediate conductive layer that wherein approaches most top conductive layer at least is applicable to the practicality interconnection of the selector under bonding welding pad.

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