Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method of the same

  • CN 1,658,385 A
  • Filed: 02/17/2005
  • Published: 08/24/2005
  • Est. Priority Date: 02/17/2004
  • Status: Active Application
First Claim
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1. , a kind of semiconductor device is characterized in that, comprising:

  • the pad electrode layer, and it forms in semiconductor chip surface, and lamination first barrier layer and aluminium lamination or aluminium alloy layer and form;

    Supporting mass, it is bonded in the surface of described semiconductor chip;

    Through hole, it arrives described first barrier layer from described semiconductor chip backside;

    Wiring layer again, it is formed on the described semiconductor chip backside that comprises in the described through hole, and is connected with described first barrier layer.

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