Dopen region in an SOI substrate

Dopen region in an SOI substrate

  • CN 1,659,710 A
  • Filed: 05/28/2003
  • Published: 08/24/2005
  • Est. Priority Date: 06/11/2002
  • Status: Active Application
First Claim
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1. method comprises:

  • SOI substrate (30) is provided, and this SOI substrate (30) is made of active layers (30C), buried insulation layer (30B) and original substrate (30A);

    In the original substrate (30A) of this active layers (30C) below, form doping zone (34);

    In the zone of this top, doping zone (34), form several transistors (32) in this SOI substrate (30) top;

    AndForm contact (35) to this doping zone (34).

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