Forming defect prevention trenches in dicing streets

Forming defect prevention trenches in dicing streets

  • CN 1,666,332 A
  • Filed: 11/15/2002
  • Published: 09/07/2005
  • Est. Priority Date: 11/28/2001
  • Status: Active Application
First Claim
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1. the method that microelectronic device wafer is carried out scribing comprises the steps:

  • The microelectronic device wafer that includes semiconductor wafer is provided, and described semiconductor wafer has setting interconnection layer thereon, and described microelectronic component comprises and being formed at wherein and by separated at least two integrated circuits of at least one dicing street;

    In described at least one dicing street, form at least one and penetrate the groove of described interconnection layer;

    Wear described semiconductor wafer in described at least one dicing street inscribe.

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