Self-aligned nanotube field effect transistor and method of fabricating same

Self-aligned nanotube field effect transistor and method of fabricating same

  • CN 1,669,160 B
  • Filed: 02/19/2003
  • Issued: 02/01/2012
  • Est. Priority Date: 03/20/2002
  • Status: Active Grant
First Claim
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1. autoregistration self-aligned nanotube field effect transistor device comprises:

  • Be deposited on the CNT on the substrate;

    Be formed on the source electrode of first end of this CNT;

    Be formed on the drain electrode of second end of this CNT;

    AndBe formed on the part of this CNT, through the grid that dielectric film and this CNT separate, wherein this grid also separates through oxide skin(coating) and this CNT, and this dielectric film is formed on this oxide skin(coating),Wherein, said grid, source electrode and drain electrode are self aligned.

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