Operating method of the memory

Operating method of the memory

  • CN 1,670,943 A
  • Filed: 11/10/2004
  • Published: 09/21/2005
  • Est. Priority Date: 01/14/2004
  • Status: Active Grant
First Claim
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1. , a kind of method of operation of memory cell is characterized in that wherein this memory cell includes one first engaging zones, one second engaging zones, a base stage, a non-conduction-type charge immersing layer and a gate, and this method comprises:

  • Carry out a step in regular turn, this step comprises;

    Apply one and be biased between this base stage and this gate, so that electron transfer and resting in this charge immersing layer;

    What estimation produced the reaction of this bias voltage one reads electric current and whether reaches a gate start voltage with decision;

    AndBy this bias voltage that changes between this base stage and this gate, with multiple this step, up to reaching this gate start voltage, and this memory cell is in the state of erasing.

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