Operating method of the memory

Operating method of the memory

  • CN 1,670,943 B
  • Filed: 11/10/2004
  • Issued: 06/20/2012
  • Est. Priority Date: 01/14/2004
  • Status: Active Grant
First Claim
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1. the method for operation of a memory;

  • It is characterized in that wherein this memory includes one first engaging zones, one second engaging zones, a substrate, a non-conduction-type electric charge capture layer and a grid;

    Wherein this first engaging zones and this second engaging zones be respectively source electrode and drain one of them, this method comprises;

    Carry out a first step in regular turn, this first step comprises;

    Apply one first and be biased between this substrate and this grid, so that electron transfer and resting in this electric charge capture layer;

    What estimation produced the reaction of this first bias voltage one first reads electric current and whether reaches a first grid cut-in voltage with decision;

    AndBy this first bias voltage that changes between this substrate and this grid, with multiple this first step, up to reaching this first grid cut-in voltage, and this memory is in the state of erasing;

    AndCarry out one second step in regular turn, this second step comprises;

    Apply one second and be biased between this grid and this first engaging zones, so that electric hole is moved and rested in this electric charge capture layer;

    Whether the second reading power taking stream that estimation produces this second bias voltage reaction reaches a second grid cut-in voltage with decision;

    AndBy this second bias voltage that changes between this grid and this first engaging zones, with multiple this second step, up to reaching this second grid cut-in voltage, and this memory is to be in a programmable state.

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