Semiconductor apparatus and method of fabricating the apparatus

Semiconductor apparatus and method of fabricating the apparatus

  • CN 1,677,634 A
  • Filed: 03/25/2005
  • Published: 10/05/2005
  • Est. Priority Date: 03/29/2004
  • Status: Active Application
First Claim
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1. , a kind of manufacture method of semiconductor device, it comprises:

  • form metallisation interlayer hole on the insulating resin film that is formed on the circuit element with electrode pad, the operation that described electrode pad is exposed;

    In described metallisation interlayer, import electric conducting material, form the operation of the metallisation interlayer that is connected with described pad electrode, wherein, the operation that forms described metallisation interlayer hole comprises that irradiating laser is forming first operation of opening and form second operation of opening by dry-etching on described insulating resin film on the described insulating resin film.

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