Semiconductor device

Semiconductor device

  • CN 1,679,236 B
  • Filed: 02/27/2003
  • Issued: 07/25/2012
  • Est. Priority Date: 02/27/2003
  • Status: Active Grant
First Claim
Patent Images

1. semiconductor device has:

  • the 1st circuit bank, move between reference voltage and the 1st supply voltage as power supply;

    And the 2nd circuit bank,, it is characterized in that at reference voltage with have between the 2nd supply voltage of the voltage level higher and move as power supply than above-mentioned the 1st supply voltage, comprising;

    The high side element of the voltage-controlled type of the 1st conductivity type carries out the output control of above-mentioned the 2nd supply voltage in the input stage of above-mentioned the 2nd circuit bank;

    AndLevel shifting circuit is the interface from above-mentioned the 1st circuit bank to above-mentioned the 2nd circuit bank, moves between above-mentioned the 1st supply voltage and above-mentioned the 2nd supply voltage as power supply, and the high side element of above-mentioned voltage-controlled type is carried out conducting control;

    Above-mentioned level shifting circuit has;

    Voltage-controlled type the 1st element of the 1st conductivity type is configured between high side element of above-mentioned voltage-controlled type and above-mentioned the 1st supply voltage, when making the high side element conductive of above-mentioned voltage-controlled type, supplies with above-mentioned the 1st supply voltage;

    AndVoltage-controlled type the 2nd element of the 1st conductivity type is configured between high side element of above-mentioned voltage-controlled type and above-mentioned the 2nd supply voltage, when making the high side element of above-mentioned voltage-controlled type non-conduction, supplies with above-mentioned the 2nd supply voltage.

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