Method for fabricating semiconductor device

Method for fabricating semiconductor device

  • CN 1,695,248 A
  • Filed: 04/15/2003
  • Published: 11/09/2005
  • Est. Priority Date: 04/15/2003
  • Status: Active Application
First Claim
Patent Images

1. the manufacture method of a semiconductor device is characterized in that, has:

  • Above semiconductor substrate, form the operation of strong dielectric film as the raw material film of the capacitor dielectric film of ferro-electric materials capacitor,On above-mentioned strong dielectric film, form the operation of upper electrode film as the raw material film of the upper electrode of above-mentioned ferro-electric materials capacitor,On above-mentioned upper electrode film, form the operation of the mask bonding film that contains precious metal element,On the aforementioned mask bonding film, form the operation of hardmask,Utilize above-mentioned hardmask that above-mentioned upper electrode film and above-mentioned strong dielectric film are carried out etched operation.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×