Method and apparatus for stable plasma processing

Method and apparatus for stable plasma processing

  • CN 1,716,530 A
  • Filed: 06/29/2005
  • Published: 01/04/2006
  • Est. Priority Date: 06/30/2004
  • Status: Active Grant
First Claim
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1. the equipment of a plasma treatment substrate, it comprises:

  • Treatment chamber;

    Be positioned at substrate support base wherein;

    Be used in described chamber, forming the RF power supply of plasma;

    WithThe plasma stability device, it is positioned at the described base of described chamber top, and is suitable for controlling the spatial distribution of the charge species and the electric neutrality material of plasma.

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