CMOS image sensor

CMOS image sensor

  • CN 1,723,572 A
  • Filed: 12/09/2003
  • Published: 01/18/2006
  • Est. Priority Date: 12/09/2002
  • Status: Active Grant
First Claim
Patent Images

1. make the process of the cmos image sensor that allows back side illumination, may further comprise the steps:

  • (a) select on the thin-film insulator germanium (TF-GeOI) substrate on silicon (TF-SOI) or the thin-film insulator,(b) generate the photodiode mobile layer on the positive extension ground of substrate,(c) in the front of substrate, on sensor matrices, make intensive metal interconnected,(d) after the front of handling TF-SOI or TF-GeOI substrate fully, remove the substrate under the insulator of imbedding (oxide of imbedding),(e) make single chip integrated structure at the oxide back side of imbedding,(f) back side is adhered to one to the transparent new mechanical substrate of interested wavelength.

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