Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

  • CN 1,725,512 A
  • Filed: 06/29/2005
  • Published: 01/25/2006
  • Est. Priority Date: 06/30/2004
  • Status: Active Application
First Claim
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1. semiconductor device comprises:

  • Substrate;

    Thin-film transistor on the described substrate, it comprises the semiconductor layer with source/drain region, the zone of described source/drain region is by the metal-induced crystallization crystallization, and its channel region is by metal-induced lateral crystallization method crystallization;

    WithThe alternate capacitor that separates with described thin-film transistor, it comprises first electrode by the metal-induced crystallization crystallization.

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