Metal gate electrode using silicidation and method of formation thereof

Metal gate electrode using silicidation and method of formation thereof

  • CN 1,729,576 A
  • Filed: 04/28/2003
  • Published: 02/01/2006
  • Est. Priority Date: 04/30/2002
  • Status: Active Application
First Claim
Patent Images

1. method of making semiconductor structure is characterized in that:

  • Base material (32) is provided;

    Dielectric (34) is provided on this base material (32);

    Polysilicon body (36) is provided on this dielectric (34), and this polysilicon body (36) contains alloy (39);

    Metal level (60) is provided on this polysilicon body (36);

    The experience silicatization process to be carrying out silication in fact on whole this polysilicon body (36), and provides electric conductor (62) on this dielectric (34);

    AndSelect alloy (39) in this polysilicon body (36), the required working function of this electric conductor (62) is depended in the selection of this alloy.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×