III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

  • CN 1,734,247 A
  • Filed: 04/15/2005
  • Published: 02/15/2006
  • Est. Priority Date: 08/10/2004
  • Status: Active Application
First Claim
Patent Images

1. III-V group-III nitride based semiconductor substrate, it is the III-V group-III nitride based semiconductor substrate of the self-supporting that is made of III-V group-III nitride based semiconductor crystal, it is characterized in that the dislocation desity of the substrate surface at least of described III-V group-III nitride based semiconductor crystal distributes even in fact.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×