III-V group nitride system semiconductor substrate, method of making the same and III-V group nitride system semiconductor

III-V group nitride system semiconductor substrate, method of making the same and III-V group nitride system semiconductor

  • CN 1,734,247 B
  • Filed: 04/15/2005
  • Issued: 07/20/2011
  • Est. Priority Date: 08/10/2004
  • Status: Active Grant
First Claim
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1. III-V group-III nitride based semiconductor substrate, it is the III-V group-III nitride based semiconductor substrate of the self-supporting that is made of III-V group-III nitride based semiconductor crystal, it is characterized in that, this substrate comprises an III-V group-III nitride based semiconductor crystal layer and the 2nd III-V group-III nitride based semiconductor crystal layer, with the almost vertical axle of substrate top surface on dislocation line assemble, have on the III-V group-III nitride based semiconductor crystal layer in the sparse zone of intensive zone of dislocation line and dislocation line, uniform in fact the 2nd III-V group-III nitride based semiconductor crystal layer of dislocation density distribution is formed up to substrate top surface with the thickness more than or equal to 10 μ

  • m, and the average dislocation density of described substrate top surface is smaller or equal to 5 * 10 6Cm -2, this dislocation density distributes and in fact evenly is meant 400 μ

    m of any place of the arbitrary section parallel with described substrate top surface from described substrate top surface to the 10 μ

    m degree of depth 2The dislocation line number of area less than 400.

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