Plasma processing apparatus and method

Plasma processing apparatus and method

  • CN 1,734,712 A
  • Filed: 07/29/2005
  • Published: 02/15/2006
  • Est. Priority Date: 07/30/2004
  • Status: Active Application
First Claim
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1. a plasma processing apparatus that uses plasma to come treatment substrate is characterized in that, comprising:

  • Accommodate the container handling that substrate is handled;

    The lower electrode of mounting substrate in described container handling;

    In described container handling, described relatively lower electrode and the upper electrode that disposes;

    High frequency electric source to one of described at least lower electrode and described upper electrode supply high frequency electric power, produces plasma between described lower electrode and described upper electrode;

    WithThe impedance with respect to the circuit that is present in electrode one side at least one high frequency frequency in the described container handling, that see from described plasma is adjusted, so that described circuit does not resonate in the electrical characteristic adjustment part.

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