Thin film transistor and method of fabricating the same

Thin film transistor and method of fabricating the same

  • CN 1,734,788 B
  • Filed: 12/31/2004
  • Issued: 11/17/2010
  • Est. Priority Date: 08/13/2004
  • Status: Active Grant
First Claim
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1. thin-film transistor comprises:

  • Dielectric substrate;

    AndBe formed on semiconductor layer, gate insulation layer, gate electrode, interlevel insulator and source/drain electrode on the substrate,Wherein this gate insulation layer by the filtration oxide skin(coating) with 1 to 20 dust thickness and silicon oxide layer or/and the individual layer of silicon nitride layer or double-deck formation, andThis semiconductor layer is formed by the polysilicon layer by the crystallization of super grain silicon crystallization technique, in crystallization process, the metal catalyst layer that is made of metallic catalyst is formed on this filtration oxide skin(coating), this filters the diffusion of oxide skin(coating) filtering metal catalyst, so that a spot of metallic catalyst is spread.

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