Method of patterning photoresist on a wafer using a transmission mask with a carbon layer

Method of patterning photoresist on a wafer using a transmission mask with a carbon layer

  • CN 1,739,065 A
  • Filed: 01/16/2004
  • Published: 02/22/2006
  • Est. Priority Date: 01/17/2003
  • Status: Active Application
First Claim
Patent Images

1. optical lithography mask comprises:

  • Transparency carrier;

    The absorption layer of composition;

    At transparency carrier and the cushion between the absorption layer of composition, this cushion has from the pattern that absorption layer was converted of composition.

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