Method for manufacturing thin film transistor and its structure

Method for manufacturing thin film transistor and its structure

  • CN 1,744,293 A
  • Filed: 09/03/2004
  • Published: 03/08/2006
  • Est. Priority Date: 09/03/2004
  • Status: Active Grant
First Claim
Patent Images

1. , a kind of manufacture method of thin-film transistor, the manufacture method of described thin-film transistor is to comprise:

  • The glass substrate of purchasing;

    Coating is made one deck negative photosensitive material on this glass substrate;

    The printing opacity masterplate of purchasing, this printing opacity masterplate is to be laid with light tight projection by a predetermined pattern;

    Press down this printing opacity masterplate to this glass substrate;

    Utilize this negative photosensitive material of ultraviolet photoetching solidifying and setting;

    Separate this printing opacity masterplate and this glass substrate, provide chemical solution cleans and removal to cover this negative photosensitive material of uncured typing because of this light tight projection;

    Whereby, this printing opacity masterplate impression and this negative photosensitive material of solidifying and setting via having this light tight projection can form required thin-film transistor.

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