Method for fabricating a nitride semiconductor light-emitting device

Method for fabricating a nitride semiconductor light-emitting device

  • CN 1,755,957 B
  • Filed: 02/18/2005
  • Issued: 06/06/2012
  • Est. Priority Date: 02/20/2004
  • Status: Active Grant
First Claim
Patent Images

1. method of making nitride semiconductor photogenerator,This device comprises:

  • The nitride-based semiconductor substrate is formed with groove and ridge and extends with bar shaped on its end face;

    AndThe nitride semiconductor growing layer, it has a plurality of nitride semiconductor layers that are formed on the nitride-based semiconductor substrate,This method comprises;

    The first step;

    Through on the nitride-based semiconductor substrate, forming the nitride semiconductor growing layer;

    At least on one of groove and ridge, form one more than or equal to the wide flat region of 10 μ

    m, thereby make the height of the height of the nitride semiconductor growing layer on the groove less than the nitride semiconductor growing layer on the ridge;

    In second step, on the surface of the nitride semiconductor growing layer in being formed at the flat region of the first step, form a ridge part of raising;

    AndThe 3rd step, along being parallel to the cut-off rule that ridge partly extends, cut apart along one of groove and ridge at least,The width of the groove that wherein on the nitride-based semiconductor substrate, forms is more than or equal to 50 μ

    m but be less than or equal to 1200 μ

    m;

    The degree of depth of the groove that on the nitride-based semiconductor substrate, forms is more than or equal to 3 μ

    m but be less than or equal to 20 μ

    m, and the width of ridge is more than or equal to 70 μ

    m but be less than or equal to 1200 μ

    m.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×