Narrow fin finfet

Narrow fin finfet

  • CN 1,759,488 B
  • Filed: 01/15/2004
  • Issued: 08/18/2010
  • Est. Priority Date: 01/23/2003
  • Status: Active Grant
First Claim
Patent Images

1. metal oxide semiconductcor field effect transistor device, this metal oxide semiconductcor field effect transistor device is included in insulating barrier (120) and goes up source electrode (310) and the drain electrode (320) that forms, and be included on this insulating barrier and the fin structure (140) that between this source electrode (310) and drain electrode (320), forms, this metal oxide semiconductcor field effect transistor device is characterised in that:

  • The thinned region that in the channel region of this fin structure, forms;

    At least the protective layer that on the thinned region of this fin structure, forms (150,160), the width of this protective layer is greater than the width of this thinned region;

    The dielectric layer (901) that around at least one channel part of this fin structure, forms;

    And(wherein the width of this thinned region is approximately between 3 to 6 nanometers for 1001A, the electrically grid (1101,1102) independently that 1001B) forms by two multi-crystal silicon areas that separate on the insulating barrier around this dielectric layer and this fin structure.

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