Semiconductor device and semiconductor device manufacturing method

Semiconductor device and semiconductor device manufacturing method

  • CN 1,783,525 A
  • Filed: 10/27/2005
  • Published: 06/07/2006
  • Est. Priority Date: 10/27/2004
  • Status: Active Application
First Claim
Patent Images

1. semiconductor element, it has:

  • The gallium nitride substrate;

    AndThe nitride-based semiconductor layer that on the upper surface of above-mentioned gallium nitride substrate, forms,The above-mentioned upper surface of above-mentioned gallium nitride substrate with respect to (0001) face at<

    1-100 direction has more than or equal to 0.1 °

    of deviation angle smaller or equal to 1.0 °

    .

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